A Subharmonic Graphene FET Mixer
نویسندگان
چکیده
منابع مشابه
A 185–215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon
A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This device has a gate length of 0.5 μm and a gate width of 2× 40 μm. The G-FET channel is patterned into an array of bow-tie-shaped nanoconstrictions, resulting in the device impedance levels of ∼50 and the ON–OFF ratios of ≥4. Th...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2012
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2011.2170655